Quantized Hall resistance = ESU of resistance × 34817776.439551
To get Quantized hall resistance resistance, simply multiply Esu of resistance by 34817776.439551. With the help of this resistance converter, we can easily convert Esu of resistance to Quantized hall resistance. Here you are provided with the converter, proper definitions,relations in detail along with the online tool to convert ESU of resistance to Quantized Hall resistance.
1 ESU of resistance is 34817776.439551 Quantized Hall resistance.
ESU of resistance to Quantized Hall resistance converter is the resistance converter from one unit to another. It is required to convert the unit of resistance from Esu of resistance to Quantized hall resistance, in resistance. This is the very basic unit conversion, which you will learn in primary classes. It is one of the most widely used operations in a variety of mathematical applications. In this article, let us discuss how to convert ESU of resistance to Quantized Hall resistance, and the usage of a tool that will help to convert one unit from another unit, and the relation between Esu of resistance and Quantized hall resistance with detailed explanation.
An ESU of resistance is another name for the statohm (statΩ), which is the basic unit of electrical resistance in the esu-cgs system of units (electrostatic centimeter-gram-second system of units). A potential difference of one statV will drive a current of one statampere through a resistance of one ESU of resistance. The ESU of resistance is a large unit; 1 ESU of resistance = 1 statΩ ≈ 900 GΩ. Therefore electrical engineers and electricians prefer using the SI unit ohm instead.
The Quantized Hall resistance is a new practical standard for electrical resistance. It is based on the resistance quantum given by the von Klitzing constant RK = h/e² = 25812.807557(18) Ω where h is the Planck’s constant and e is the elementary charge. The quantum Hall effect is a quantum-mechanical version of the Hall effect, observed in MOSFETs (metal–oxide–semiconductor field-effect transistors) when they are subjected to low temperatures and strong magnetic fields, where the Hall conductivity takes on the quantized values. This quantization is incredibly precise, which justifies its use as a new practical standard for electrical resistance.