Quantized Hall resistance = reciprocal siemens (1/S) / 25813.113061435
To get Quantized hall resistance resistance, simply divide Reciprocal siemens by 25813.113061435. With the help of this resistance converter, we can easily convert Reciprocal siemens to Quantized hall resistance. Here you are provided with the converter, proper definitions,relations in detail along with the online tool to convert reciprocal siemens (1/S) to Quantized Hall resistance.
1 reciprocal siemens (1/S) is 3.874E-5 Quantized Hall resistance.
reciprocal siemens (1/S) to Quantized Hall resistance converter is the resistance converter from one unit to another. It is required to convert the unit of resistance from Reciprocal siemens to Quantized hall resistance, in resistance. This is the very basic unit conversion, which you will learn in primary classes. It is one of the most widely used operations in a variety of mathematical applications. In this article, let us discuss how to convert reciprocal siemens (1/S) to Quantized Hall resistance, and the usage of a tool that will help to convert one unit from another unit, and the relation between Reciprocal siemens and Quantized hall resistance with detailed explanation.
A siemens (S) is the SI derived unit of electrical conductance and electric admittance. Conductance and admittance are the reciprocals of resistance and impedance respectively, hence one siemens is equal to the reciprocal of one ohm. Another name of the siemens is the mho, which is written with an upside-down capital Greek letter Omega ℧. A device has a conductance of one siemens if the electric current through this device will increase by one ampere for every increase of one volt of electric potential difference across the device. 1/S = 1 Ω.
The Quantized Hall resistance is a new practical standard for electrical resistance. It is based on the resistance quantum given by the von Klitzing constant RK = h/e² = 25812.807557(18) Ω where h is the Planck’s constant and e is the elementary charge. The quantum Hall effect is a quantum-mechanical version of the Hall effect, observed in MOSFETs (metal–oxide–semiconductor field-effect transistors) when they are subjected to low temperatures and strong magnetic fields, where the Hall conductivity takes on the quantized values. This quantization is incredibly precise, which justifies its use as a new practical standard for electrical resistance.