=

Precision:

Abohm to Quantized hall resistance Conversion Formula:

Quantized Hall resistance = abohm / 25813113061435

How to Convert abohm to Quantized Hall resistance?

To get Quantized hall resistance resistance, simply divide Abohm by 25813113061435. With the help of this resistance converter, we can easily convert Abohm to Quantized hall resistance. Here you are provided with the converter, proper definitions,relations in detail along with the online tool to convert abohm to Quantized Hall resistance.

How many Quantized hall resistance in one Abohm?

1 abohm is 3.874E-14 Quantized Hall resistance.

abohm to Quantized Hall resistance converter is the resistance converter from one unit to another. It is required to convert the unit of resistance from Abohm to Quantized hall resistance, in resistance. This is the very basic unit conversion, which you will learn in primary classes. It is one of the most widely used operations in a variety of mathematical applications. In this article, let us discuss how to convert abohm to Quantized Hall resistance, and the usage of a tool that will help to convert one unit from another unit, and the relation between Abohm and Quantized hall resistance with detailed explanation.

Abohm Definition

An abohm (abΩ) is the basic unit of electrical resistance in the emu-cgs system of units (electromagnetic centimeter-gram-second system of units). A potential difference of one abvolt will drive a current of one abampere through a resistance of one abohm. One abohm is equal to 10⁻⁹ ohms = 1 nanoohm in the SI system of units. An abohm is an extremely small resistance and this unit is almost never used. Extremely small resistances are usually referred to in terms of conductance.

Quantized hall resistance Definition

The Quantized Hall resistance is a new practical standard for electrical resistance. It is based on the resistance quantum given by the von Klitzing constant RK = h/e² = 25812.807557(18) Ω where h is the Planck’s constant and e is the elementary charge. The quantum Hall effect is a quantum-mechanical version of the Hall effect, observed in MOSFETs (metal–oxide–semiconductor field-effect transistors) when they are subjected to low temperatures and strong magnetic fields, where the Hall conductivity takes on the quantized values. This quantization is incredibly precise, which justifies its use as a new practical standard for electrical resistance.