Resistance Converter
Microhm To Quantized Hall Resistance
=
Calculations:
Microhm to Quantized hall resistance Conversion Formula:
Quantized Hall resistance = microhm / 25813113061.435
How to Convert microhm to Quantized Hall resistance?
To get Quantized hall resistance resistance, simply divide Microhm by 25813113061.435. With the help of this resistance converter, we can easily convert Microhm to Quantized hall resistance. Here you are provided with the converter, proper definitions,relations in detail along with the online tool to convert microhm to Quantized Hall resistance.
How many Quantized hall resistance in one Microhm?
1 microhm is 3.874E-11 Quantized Hall resistance.
microhm to Quantized Hall resistance converter is the resistance converter from one unit to another. It is required to convert the unit of resistance from Microhm to Quantized hall resistance, in resistance. This is the very basic unit conversion, which you will learn in primary classes. It is one of the most widely used operations in a variety of mathematical applications. In this article, let us discuss how to convert microhm to Quantized Hall resistance, and the usage of a tool that will help to convert one unit from another unit, and the relation between Microhm and Quantized hall resistance with detailed explanation.
Microhm Definition
A microhm (μΩ) is a decimal fraction of the SI derived unit ohm and is equal to 10⁻⁶ Ω. Note that the final vowel in the SI prefix micro is omitted. A conductor has an electrical resistance of one microhm when a constant potential difference of one kilovolt applied between its ends produces in this conductor a current of one kiloampere. A microhm is an extremely small resistance and this unit is seldom used. Extremely small resistances are usually referred to in terms of conductance.
Quantized hall resistance Definition
The Quantized Hall resistance is a new practical standard for electrical resistance. It is based on the resistance quantum given by the von Klitzing constant RK = h/e² = 25812.807557(18) Ω where h is the Planck’s constant and e is the elementary charge. The quantum Hall effect is a quantum-mechanical version of the Hall effect, observed in MOSFETs (metal–oxide–semiconductor field-effect transistors) when they are subjected to low temperatures and strong magnetic fields, where the Hall conductivity takes on the quantized values. This quantization is incredibly precise, which justifies its use as a new practical standard for electrical resistance.